Indium Nitride and Related Alloys

A valuable asset in determining the present state of knowledge of indium nitride (InN), this comprehensive reference provides insight into its growth, structural, optical, and electronic properties. It combines all data since the 2001 discovery of 0.7 eV as the accepted value of the band gap of InN. Drawing from both theoretical and experimental perspectives, the expert authors cover the temperature insensitive transport properties of InN and apply InN to a wide range of device applications. They also discuss the high free electron density and the lack of a lattice-matched substrate -- two problems a user needs to know.